Vasu Raj Jain engineered a scalable multi-tenant SaaS platform, reducing onboarding from 52 to 2 days, eliminating deployment ...
Abstract: In this work, a semi-analytical compact model is developed to quantify the impact of random process variations on nanosheet field-effect transistors (NSFETs) at the 3nm technology node.
Abstract: Accurate and efficient modeling of lateral double-diffused MOS (LDMOS) devices is critical for process optimization and reliability analysis, especially under limited simulation budgets.