Abstract: The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact ...
Abstract: Position-sensitive detectors (PSDs) based on the lateral photovoltaic effect (LPE) have been widely utilized in various applications and how to improve the LPE sensitivity has attracted ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results