Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...
Abstract: The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network ...
This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results