Abstract: A new concept for encapsulation of discrete bipolar high-power devices using epoxy mold compound (EMC) is demonstrated on silicon 4.5-kV press-pack fast recovery diodes (FRDs) with wafer ...
High-Temperature Encapsulation Materials for Power Modules: Technology and Future Development Trends
Abstract: The applications of wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) in power modules are currently limited by the thermal stability of ...
INQUIMAE-DQIAQF and Departamento de Química Biológica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, C1428EHA Buenos Aires, Argentina * ...
Because of the way in which NAT devices translate network traffic, you may experience unexpected results when you put a server behind a NAT device and then use an IPsec NAT-T environment. Therefore, ...
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