The Chinese manufacturer said it developed a new circuit-model–based method to accurately detect hot-spot risks in TOPCon back-contact modules, overcoming limitations of the IEC 61215 approach caused ...
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Abstract: This paper proposes a method to measure the capacitance of an asymmetric half-bridge power module using a single 3-port S-parameter measurement. The capacitance of a power module originates ...
Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...