A team from China has strengthened the case for manufacturing GaN HEMTs by plasma-assisted MBE by producing simple devices that can block more than 2.5 kV. While MOCVD dominates the manufacture of GaN ...
In his native Germany, Uwe Neumann used his passion for engineering to research and design autonomous aircraft. Now at home in Greenville, he applies the same passion to making homes and businesses ...
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