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Abstract: Partial discharge (PD) assessment, widely applied in HV IGBT (insulated gate bipolar transistor) module, is not generally adopted for modules at low-to-medium voltage levels. In this article ...
Abstract: Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal ...
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