Abstract: The applications of wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) in power modules are currently limited by the thermal stability of ...

Abstract: A new concept for encapsulation of discrete bipolar high-power devices using epoxy mold compound (EMC) is demonstrated on silicon 4.5-kV press-pack fast recovery diodes (FRDs) with wafer ...

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