Integrated GaN power stage with onboard control, sensing, and communication, delivering up to 20 ARMS in a 32 mm ...
Although they require more complex circuits, three-level inverters are more efficient than their two-level cousins. Effective partitioning simplifies implementation of the three-level configuration.
A high-performance, low-cost, compact 3-phase inverter based on next generation power modules optimized to use third generation of silicon carbide (SiC) MOSFETs. May 21st, 2020 - By: Wolfspeed, a Cree ...
Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
Results that may be inaccessible to you are currently showing.
Hide inaccessible results