A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

According to independent consulting and research organization IDTechEX, any vehicle manufacturer without a compelling line up of electric vehicles by 2025 is signing its “death warrant.” It’s not ...

LINCOLN, England, Oct. 31, 2018 /CNW/ - Dynex Power Inc. (TSXV: DNX), a leading manufacturer of high power semiconductors and electronic equipment, is pleased to announce the launch of ...

Semikron has added a new topology for use in three-level inverters to its Semitop IGBT product range. The topology integrates IGBT technology with lower switching and conduction losses to produce ...

Size and power often seem like opposite sides of a coin. When you reduce size – one of the ever-pressing goals in our industry – you inevitably reduce power. But does that have to be the case? By ...