Internally reflective laser diode promises to displace edge-emitting devices in power applications Offering a low-cost replacement to edge-emitting laser stacks, the SELD is a scalable device that can ...

Researchers at the University of Tsukuba, Japan, have developed a novel method for rapidly creating laser light sources in large quantities using an inkjet printer that ejects laser-emitting droplets.

Researchers have found a way to convert nanoparticle-coated microscopic beads into lasers smaller than red blood cells. These microlasers, which convert infrared light into light at higher frequencies ...

The National Institute of Information and Communications Technology of Japan, in collaboration with Sony Semiconductor Solutions Corporation (Sony), has developed the world's first practical ...

- Development of the world's first practical surface-emitting laser suitable for optical fiber communications systems. - Utilization of quantum dots as an optical gain medium, enabled by NICT's ...

SPL S1L90H_3 laser’s narrow emission width produces better performance and eases optical integration in long-distance LiDAR applications High peak and average power output ratings differentiate SPL ...

Vertical-cavity surface-emitting laser (VCSELs) are a type of semiconducting laser diode used across many optical communications applications. They have been around since 1979, where they were created ...

In a first for the field, researchers from The Grainger College of Engineering at the University of Illinois Urbana-Champaign have reported a photopumped lasing from a buried dielectric ...

A European project known as NATAL is striving to produce high-power optically pumped semiconductor disk lasers emitting in the visible for projection applications. Mircea Guina from the ...

Researchers have developed a new compact and ultrafast, high-power yellow laser. The tunable laser exhibits excellent beam quality and helps fill the need for a practical yellow light source emitting ...

Osram Opto Semiconductors announced lab results for a direct-emitting green-InGaN (indium-gallium-nitride)-laser diode. In pulsed-mode operation at room temperature, the laboratory prototype achieved ...