The 3.3-V IC is organized as 256 Kwords by 16 bits and comes in a 400-mil 44-lead TSOP package. Active read and write current values are 55 mA and 105 mA, typical standby current is 9 mA and, since it ...

NUREMBERG, Germany--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced the development of ...

Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading ...

CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ:MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) non-volatile solutions, has ...

New PERSYST EM064LX and EM128LX HR STT-MRAM Expanding Use in Aerospace, Automotive, and Industrial Applications Unveiled at Embedded World 2025 CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies ...

CHANDLER, Ariz., March 05, 2026--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent ...

A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such ...

CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc., (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM) persistent memory solutions, announced ...

Adds 2Mb, 8Mb and 32Mb capacities to its industry-leading Toggle MRAM product family, offering replacements for legacy SRAM sockets CHANDLER, Ariz.--(BUSINESS WIRE)--#FlashMemory--Everspin ...

Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of persistent Magnetoresistive Random Access Memory (MRAM) solutions, today announced its newest ...