IXYS Corporation announced the introduction of a new range of IGBT modules for high power applications. The new IXYS SIMBUS F module is an industry standard outline optimized for IGBT phase leg ...
The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...
New IXIDM1401 driver module combines supreme compactness with the highest performance and reliability. IXYS’ objective is to serve the market with IGBT driver parts that enable a short design circle ...
IGBT failures are often caused by gap-types defects in or among the materials bonded to create the module. The defects may be voids, delaminations, disbonds, or may involve the tilting of a layer, ...
Local power that is available for protection circuits, such as desaturation detection. Among the disadvantages of this type of driver are the cost, complexity and board space required for all the ...
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