Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
In the past, finding the optimum IGBT module solution was difficult in terms of low cost in combination with high performance and high reliability. Some discrete IGBTs employed a type of silicon ...
While punch throughs (PTs) are the preferred power device for a growing segment of industrial power conversion applications requiring operation from ac line voltages of 575Vac to 690Vac, historically, ...
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